Paper Title:
Investigation on Preferential Chemical Etching of Dislocations in Sapphire
  Abstract

In this work, the pits were successfully etched on the (001) sapphire single crystal surface. The experiments were processed by using fused KOH etchant at different temperature about 15 minutes. The difference in the morphology of etching pits on c plane sapphire was observed by metallurgical microscope and atomic force microscopy. It was found that the size of etch pits would be increasing if the temperature high enough. And the density of etch pits had a maximum at about 320°C.Finally, it was put forward and discussed that three kinds of mechanisms about the etching pits based on the experimental fact: annexed, merger, expansion.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
1318-1320
DOI
10.4028/www.scientific.net/MSF.663-665.1318
Citation
X. J. Xie, Y. Y. Li, M. Wang, L. M. Liang, Q. Y. Hao, C. C. Liu, "Investigation on Preferential Chemical Etching of Dislocations in Sapphire", Materials Science Forum, Vols. 663-665, pp. 1318-1320, 2011
Online since
November 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ping Wu, Murugesu Yoganathan, Ilya Zwieback, Yi Chen, Michael Dudley
Abstract:Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results...
333
Authors: Hui Shen, Jia Yue Xu, An Hua Wu, Min Jin, Guo Jian Jiang
Abstract:YFeO3 single crystal, as a novel magneto-optical material, has attracted much attention due to its remarkable properties of primary...
580
Authors: Hitoshi Habuka, Kazuchika Furukawa, Toshimitsu Kanai, Tomohisa Kato
Chapter 3: Physical Properties and Characterization of SiC
Abstract:The etch pit density produced on the C-face 4H-SiC substrate using chlorine trifluoride gas at various temperatures was evaluated. Because...
379
Authors: Yuan Tian, Li Min Liang, Wen Cheng Wu, Qiu Yan Hao, Cai Chi Liu
Chapter 2: Micro/Nano Materials
Abstract:The dislocations in electron-irradiated c-plane n-GaN epitaxial layers grown on c-plane sapphire substrates by MOCVD were revealed by several...
531