Using carbon nanotube as field emitter, the diode-structure field emission display device was fabricated with conventional sintering techniques. With the precise photolithography process, the indium tin oxide film coated on the anode faceplate surface was etched to form the bar anode electrode. Using the screen-priinting technology, the insulation slurry was prepared on the bar anode electrode surface to form the anode separate layer. So the discrete anode sub-pixels layer structure was developed. For the vacuum-selaed FED device, the typical field emission characteristics were measured and the displayed dot matrix image was also presented. The fabricated FED device with discrete anode sub-pixel layer possessed higher dispaly image brightness, good image disnlay performance and better field emission characteristics.