Paper Title:
Exploration in the Two-Photon Absorption Effect of Silicon Based Films
  Abstract

In this work, the crystallization of different silicon based thin films as the precursor of crystallization was investigated by femto-second laser with 800 nm wavelength. The linear absorption coefficient of a-Si films at that wavelength is quit lower than the other structures of Si-based thin film, which has no related with the incident light energy. However, we found that the crystallization of a-Si films was better than μc-Si films as the precursor. We use Z-scan techniques to prove that the two-photon absorption effect would be responsible for the crystallization. And unlike the linear absorption, the two-photon absorption effect is correlated with the incident light energy, as well as the micro-structure of the silicon based film. At the end of the paper, the crystallization by laser with wavelength longer than the absorption limit was discussed.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
348-351
DOI
10.4028/www.scientific.net/MSF.663-665.348
Citation
M. Yang, J. Li, Y. Yao, C. J. Yin, C. Y. Wu, X. N. Zhu, Z. J. Xu, S. Z. Xiong, "Exploration in the Two-Photon Absorption Effect of Silicon Based Films", Materials Science Forum, Vols. 663-665, pp. 348-351, 2011
Online since
November 2010
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$32.00
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