Paper Title:
Effect of Ammoniating Temperature on Growth of GaN Nanowires with V as Intermediate Layer
  Abstract

GaN nanowires have been successfully grown on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/V thin films. The influence of ammoniating temperature on the growth of GaN nanowires was analyzed in particular. The results demonstrate that ammoniating temperature has great influence on the growth of GaN nanowires. GaN nanowires are single crystal GaN with a hexagonal wurtzite structure and high crystalline quality after ammoniation at 900 oC for 15 min, which are straight and smooth with uniform thickness along the spindle direction and high crystalline quality, 50 nm in diameter and several tens of microns in length with good emission properties, and the growth direction of the nanowire is along the preferred (002) plane. A clear red-shift of the band-gap emission has occurred. The growth mechanism is also discussed briefly.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
356-360
DOI
10.4028/www.scientific.net/MSF.663-665.356
Citation
F. Shi, Z. Z. Yang, C. S. Xue, "Effect of Ammoniating Temperature on Growth of GaN Nanowires with V as Intermediate Layer", Materials Science Forum, Vols. 663-665, pp. 356-360, 2011
Online since
November 2010
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Price
$32.00
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