Paper Title:
Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method
  Abstract

We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
393-396
DOI
10.4028/www.scientific.net/MSF.663-665.393
Citation
F. R. Zhong, X. Y. Lv, Z. H. Jia, "Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method", Materials Science Forum, Vols. 663-665, pp. 393-396, 2011
Online since
November 2010
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$32.00
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