Paper Title:
Structural and Photoluminescent Properties of Li-Doped ZnO Film Prepared by Sol-Gel Technique
  Abstract

The effect of an impurity as a donor or an acceptor in ZnO film is determined by its distribution in ZnO lattice. In this paper the distribution of Li is investigated by X-ray diffraction (XRD) and photoluminescence (PL). It is found that Li-doped ZnO films own different dependence on heat treatment temperature by contrast with pure ZnO films. For Li-doped ZnO films, although the crystallinity is promoted after heat treatment at 500oC, it is impeded effectively after heat treatment at 600oC. The abnormal phenomenon implies that Li preferential inhabits at Zn-sublattice to form a substitutional defect as an acceptor unless Li content exceeds its solubility in Zn-sublattice. The change of the PL spectra of pure ZnO films after heat treatment at different temperatures reveals that the PL peak at 650nm origins from interstitial defects. Moreover, with the increase of Li content, the intensity of the peak at 650nm decreases firstly and then increases again. This interesting changing trend further reveals that superfluous Li will enter into the octahedral interspaces as donors. As a conclusion it is proposed that it is difficult to obtain high conductive p-ZnO by monodoping of Li.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
397-400
DOI
10.4028/www.scientific.net/MSF.663-665.397
Citation
P. F. Cheng, S. T. Li, H. C. Liu, L. X. Song, B. Gao, Q. P. Wang, "Structural and Photoluminescent Properties of Li-Doped ZnO Film Prepared by Sol-Gel Technique", Materials Science Forum, Vols. 663-665, pp. 397-400, 2011
Online since
November 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Daniel Macdonald, Prakash N.K. Deenapanray, Andres Cuevas, S. Diez, Stephan W. Glunz
Abstract:Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually...
497
Authors: Odila Florêncio, Paulo Sergio Silva, Carlos Roberto Grandini
Abstract:Metals and alloys containing solute atoms dissolved interstitially often show anelastic behavior due to a process know as stress-induced...
137
Authors: A. Carvalho, R. Jones, C. Janke, Sven Öberg, Patrick R. Briddon
Abstract:The properties of point defects introduced by low temperature electron irradiation of germanium are investigated by first-principles...
253
Authors: Armando Cirilo Souza, Carlos Roberto Grandini, Odila Florêncio
Abstract:The scientific and technological development in the area of new materials contributed to several applications of niobium and its alloys in...
261
Authors: Peng Fei Cheng, Han Chen Liu, Ying Tang Zhang
Chapter 1: Materials Science and Engineering
Abstract:Defect structure of ZnO determines the optoelectronic characteristics of ZnO crystal and film. The identification and modulation of the...
135