Paper Title:
Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer
  Abstract

The switching character of SiCGe/SiC heterojunction phototransistors with charge-compensation technique has been simulated with commercial simulator MEDICI. The influences of light power density, wavelength and carrier lifetime on switching characters were studied. Simulation result shown that the devices are latch-free device and fall time is much longer than rise time. The increasing of light power density and wavelength cause shorter rise time and longer fall time unless reaches SiCGe absorption edge 520nm, trade-off must made between responsivity and switching speed when carrier lifetime is considered, the ratio of them gets it maximum values at minority carrier lifetime equal 90ns.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
498-501
DOI
10.4028/www.scientific.net/MSF.663-665.498
Citation
H. B. Pu, L. Cao, Z. M. Chen, T. Lin, S. J. Zhou, "Switching Characters of SiCGe/SiC Heterojunction: An Optically Triggered Lateral Power Transistor with Charge Compensation Layer", Materials Science Forum, Vols. 663-665, pp. 498-501, 2011
Online since
November 2010
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