Paper Title:
Electrical Properties of Hydrogen Terminated P-Type Diamond Film
  Abstract

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
625-628
DOI
10.4028/www.scientific.net/MSF.663-665.625
Citation
F. Y. Xia, L. J. Wang, J. Huang, K. Tang, J. J. Zhang, W. M. Shi, "Electrical Properties of Hydrogen Terminated P-Type Diamond Film", Materials Science Forum, Vols. 663-665, pp. 625-628, 2011
Online since
November 2010
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Price
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