Paper Title:
A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method
  Abstract

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
650-653
DOI
10.4028/www.scientific.net/MSF.663-665.650
Citation
J. M. Byun, J. S. Han, J. H. Park, S. E. Lee, H. C. Lee, "A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method", Materials Science Forum, Vols. 663-665, pp. 650-653, 2011
Online since
November 2010
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