Paper Title:
Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si
  Abstract

Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
654-657
DOI
10.4028/www.scientific.net/MSF.663-665.654
Citation
G. W. Wang, H. X. Zheng, S. Y. Yao, F. S. Zhang, "Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si", Materials Science Forum, Vols. 663-665, pp. 654-657, 2011
Online since
November 2010
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