Paper Title:
Hanle Effect in Semiconductor with Weak Spin-Orbit Coupling
  Abstract

A theoretical model to study Hanle effect for materials with weak spin-orbit coupling is developed. It considers the contributions from not only the drift current but also the diffusion part, which pronouncedly enlarges the application scope of the model. The spin lifetime in spin drift diffusion equation is also corrected by considering the thermal effect and the influence of external electrical field.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
978-981
DOI
10.4028/www.scientific.net/MSF.663-665.978
Citation
Y. L. Mi, X. Q. Zhao, L. Wang, "Hanle Effect in Semiconductor with Weak Spin-Orbit Coupling", Materials Science Forum, Vols. 663-665, pp. 978-981, 2011
Online since
November 2010
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