Paper Title:
Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals
  Abstract

Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.

  Info
Periodical
Edited by
R. Saravanan
Pages
153-163
DOI
10.4028/www.scientific.net/MSF.671.153
Citation
M. Prema Rani, R. Saravanan, "Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals", Materials Science Forum, Vol. 671, pp. 153-163, 2011
Online since
January 2011
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