Paper Title:
Effects of Impurities Distribution on the Crystal Structure and Electrical Properties of Multi-Crystalline Silicon Ingots
  Abstract

Multi-crystalline silicon ingots were prepared by directional solidification using vacuum induction melting furnace. The content of aluminum and iron deeply decreased in the columnar crystal region of the multi-crystalline silicon ingots. The columnar crystal growth broke off corresponded to the iron contents sharply increased. The height of columnar crystal in the silicon ingots related to the pulling rates had been clarified by the constitutional supercooling theory. The maximum of the resistivity and the minority carrier lifetime closed to the transition zone where the conductive type changed from p-type to n-type in silicon ingots. Further analysis suggested that the electrical properties were related to the contents of shallow level impurities aluminum, boron and phosphorus.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
101-104
DOI
10.4028/www.scientific.net/MSF.675-677.101
Citation
Q. Z. Xing, W. Dong, S. A. Shi, G. B. Li, Y. Tan, "Effects of Impurities Distribution on the Crystal Structure and Electrical Properties of Multi-Crystalline Silicon Ingots", Materials Science Forum, Vols. 675-677, pp. 101-104, 2011
Online since
February 2011
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