Paper Title:
Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification
  Abstract

The distribution of resistivity, impurity and polarity in multicrystalline silicon ingot prepared by directional solidification method was detected. The effect of impurity distribution on resistivity was also researched. The results show that the shapes of equivalence line of resistivity in the cross section and vertical section of the silicon ingot depend on the solid-liquid interface. The resistivity in the vertical section increases with the increasing of solidified height at the beginning of solidification and reaches to maximum at the polarity transition point, then decreases rapidly with the increasing of solidified height and tends to zero on the top of the ingot because of the high impurity concentration. Study proves that the variation of resistivity in the vertical section is mainly relevant to the concentration distribution of the impurities such as Al, B and P in the growth direction.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
109-112
DOI
10.4028/www.scientific.net/MSF.675-677.109
Citation
S. A. Shi, W. Dong, S. H. Sun, Y. Tan, G. B. Li, F. M. Xu, "Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification", Materials Science Forum, Vols. 675-677, pp. 109-112, 2011
Online since
February 2011
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