Paper Title:
Influence of Al2O3 Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering
  Abstract

Indium Tin Oxide (ITO) films on PET substrate sandwiching Al2O3 buffer layers with different thickness have been prepared by magnetron sputtering at low deposition temperature. The crystal structures, electrical and optical properties of ITO films have been investigated by XRD, four-point probe technology and UV-Vis spectrophotometer as a function of different Al2O3 buffer layers thickness, respectively. XRD reveals that there is an amorphous structure in ITO films with no buffer layer. However, ITO films became crystalline after sandwiching the buffer layer. It can be found that there are two major peaks, (222) and (400) of ITO film. A smallest resistivity of 3.53×10-4 Ω.cm was obtained for ITO film with Al2O3 buffer layers thickness 75nm. The average transmittance of ITO/Al2O3/PET films in the visible range of 400-760nm wavelength was around 80%. It can be conclude that the (222) orientation of ITO film is more in favor of low resistivity.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
1209-1212
DOI
10.4028/www.scientific.net/MSF.675-677.1209
Citation
W. Tang, Y. P. Chao, Y. S. Fang, X. L. Weng, L. J. Deng, "Influence of Al2O3 Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering", Materials Science Forum, Vols. 675-677, pp. 1209-1212, 2011
Online since
February 2011
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