Paper Title:
The Competitive Reactions in Atomic Layer Deposition of HfO2, ZrO2 and Al2O3 on Hydroxylated Si(100) Surfaces: A Density Functional Theory Study
  Abstract

The competitive reactions in atomic layer deposition (ALD) of HfO2, ZrO2 and Al2O3 on the hydroxylated Si(100) surfaces are investigated by using density functional theory. The surface reactions in ALD of HfO2 and ZrO2 show large similarities in energetics and geometrical structures. However, both of them show discrepancies with the surface reactions in ALD of Al2O3. In addition, by comparing with the self-termination reactions, we could find that the further growth reactions are both kinetically and thermodynamically more favorable in ALD of HfO2, ZrO2 and Al2O3.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
1249-1252
DOI
10.4028/www.scientific.net/MSF.675-677.1249
Citation
J. Ren, G. F. Zhou, "The Competitive Reactions in Atomic Layer Deposition of HfO2, ZrO2 and Al2O3 on Hydroxylated Si(100) Surfaces: A Density Functional Theory Study", Materials Science Forum, Vols. 675-677, pp. 1249-1252, 2011
Online since
February 2011
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$32.00
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