Paper Title:
Relationship between Structure and Functional Properties of the ZnO:Al Thin Films
  Abstract

ZnO:Al thin films were deposited on glass substrates by r. f. magnetron sputtering. The crystal structures were characterized using X-ray diffraction. The electrical property and the light transmission of the ZnO:Al thin films were investigates utilizing Hall system and UV/Vis/NIR spectrophotometer. The results show that the ZnO:Al thin films prepared with the sputtering power of 100W, working pressure of 0.3Pa and substrate temperature of 250°C have the resistivity as low as 3.1×10-3Ω⋅cm and transmittance over 90% in visible region. From the GIXRD patterns, higher electrical conductivity is related to the higher ratio of I2 (103)/I(002), which is a new reasonable structure parameter to estimate the electrical property of ZnO:Al thin films.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
1275-1278
DOI
10.4028/www.scientific.net/MSF.675-677.1275
Citation
H. Y. Yue, A. M. Wu, J. Hu, X. Y. Zhang, T. J. Li, "Relationship between Structure and Functional Properties of the ZnO:Al Thin Films", Materials Science Forum, Vols. 675-677, pp. 1275-1278, 2011
Online since
February 2011
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Price
$32.00
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