Paper Title:
Preparation of P-Type Microcrystal Si:H Films by ECR-PECVD
  Abstract

P-type microcrystalline silicon films prepared by electron cyclotron resonance(ECR)PECVD are studied here. Silane diluted with Ar (SiH4/Ar=1/19) is used as a source gas and diborane (B2H6) diluted with H2 (100ppm) as doping gases. The effect of flow rate of doping gas on the microstructures and electrical properties of the films were investigated. Raman spectroscopy and X-ray diffraction were used to determine the film structure; AFM was employed to characterize the film surface topography; Hall measurements were carried out on the doped films to determine the carrier type, carrier concentration, and Hall mobility. The optical quality was measure by transmission spectrum.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
1287-1290
DOI
10.4028/www.scientific.net/MSF.675-677.1287
Citation
X. Y. Zhang, A. M. Wu, H. Y. Yue, J. A. Hu, L. S. Wen, "Preparation of P-Type Microcrystal Si:H Films by ECR-PECVD", Materials Science Forum, Vols. 675-677, pp. 1287-1290, 2011
Online since
February 2011
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$32.00
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