Paper Title:
Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy
  Abstract

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
15-19
DOI
10.4028/www.scientific.net/MSF.675-677.15
Citation
T. Shirasawa, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara, "Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy", Materials Science Forum, Vols. 675-677, pp. 15-19, 2011
Online since
February 2011
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