Paper Title:
Removal of Phosphorus in Metallurgical Grade Silicon Using Electron Beam Melting
  Abstract

The effects of melting condition on the dephosphorization behavior in metallurgical grade silicon (MG-Si) by electron beam melting (EBM) were investigated in this study. Experiment results showed that phosphorus content decreased by evaporation with the increase of melting time, and evaporation rate increased with the increase of electron beam power. Phosphorus content decreased to below 0.1 ppmw by EBM treatment at 21 kW for 1800 seconds. The dephosphorization reaction was found to follow the first order kinetics. Dephosphorization rate was controlled by free evaporation.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
45-48
DOI
10.4028/www.scientific.net/MSF.675-677.45
Citation
W. Dong, Q. Wang, X. Peng, Y. Tan, D. C. Jiang, "Removal of Phosphorus in Metallurgical Grade Silicon Using Electron Beam Melting", Materials Science Forum, Vols. 675-677, pp. 45-48, 2011
Online since
February 2011
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Price
$32.00
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