Paper Title:

Effect of Pulling Rate on Multicrystalline Silicon Ingot during Directional Solidification

Periodical Materials Science Forum (Volumes 675 - 677)
Main Theme Advanced Material Science and Technology
Edited by Yi Tan and Dongying Ju
Pages 53-56
DOI 10.4028/www.scientific.net/MSF.675-677.53
Citation Shi Hai Sun et al., 2011, Materials Science Forum, 675-677, 53
Online since February, 2011
Authors Shi Hai Sun, Yi Tan, Hui Xing Zhang, Wei Dong, Jun Shan Zhang, Gen Xiong Hu
Keywords Directional Solidification, Purification, Segregation, Silicon, Solidification Rate
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Abstract

In this paper, the structure and composition of multicrystalline silicon ingots prepared by directional solidification with different pulling rates were analyzed to investigate the effect of pulling rate on the multicrystalline silicon ingot. The results showed that the lower pulling rate will make the site taking place constitutional supercooling move to the upper part of ingots and make the high purity area become larger. Lowering the pulling rate will decrease the impurity effective segregation coefficient and the solid-liquid interface curvature.