Paper Title:
Effect of Pulling Rate on Multicrystalline Silicon Ingot during Directional Solidification
  Abstract

In this paper, the structure and composition of multicrystalline silicon ingots prepared by directional solidification with different pulling rates were analyzed to investigate the effect of pulling rate on the multicrystalline silicon ingot. The results showed that the lower pulling rate will make the site taking place constitutional supercooling move to the upper part of ingots and make the high purity area become larger. Lowering the pulling rate will decrease the impurity effective segregation coefficient and the solid-liquid interface curvature.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
53-56
DOI
10.4028/www.scientific.net/MSF.675-677.53
Citation
S. H. Sun, Y. Tan, H. X. Zhang, W. Dong, J. S. Zhang, G. X. Hu, "Effect of Pulling Rate on Multicrystalline Silicon Ingot during Directional Solidification", Materials Science Forum, Vols. 675-677, pp. 53-56, 2011
Online since
February 2011
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Price
$32.00
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