Paper Title:
Phase Equilibria of Boron in Metallurgical Grade Silicon at 1300°C
  Abstract

The diffusion layer and melt of silicon-boron are respectively obtained after quenched in water at 1300 oC by using metallurgical grade silicon (MG-Si) powder and amorphous boron powder. The phase equilibria for boron in MG-Si have been investigated by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The back scattered electron (BSE) image of diffusion layer displays the intermediate phase SiB4 in silicon-boron phase band, and the XRD results also indicate that SiB4 exists in silicon-boron diffusion layer at 1300 oC. It is inferred that the intermediate phase SiB4 is formed by the reaction (Si) + SiB6 ↔ SiB4 according to the equilibrium composition of Si/B=4/1 as quantified by Energy Dispersive Spectroscopy.

  Info
Periodical
Materials Science Forum (Volumes 675-677)
Edited by
Yi Tan and Dongying Ju
Pages
85-88
DOI
10.4028/www.scientific.net/MSF.675-677.85
Citation
J. J. Wu, W. H. Ma, B. Yang, D. C. Liu, Y. N. Dai, "Phase Equilibria of Boron in Metallurgical Grade Silicon at 1300°C", Materials Science Forum, Vols. 675-677, pp. 85-88, 2011
Online since
February 2011
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$32.00
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