Paper Title:
Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]
  Abstract

We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth profiles were investigated to optimize hetero-epitaxial growth of 3C-SiC layers. We also focused on the homogeneous film deposition of 3C-SiC on Si by employing two susceptor shapes, flat and tilted susceptors, to control a thickness of the boundary layer formed on the Si substrate. Fringe color patterns were observed on 3C-SiC layer on Si and hence it was easy to characterize the film uniformity by analyzing this color. 3C-SiC epitaxial layers were systematically analyzed by an optical microscope, a Raman spectroscopy, a SEM and an XRD.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
107-110
DOI
10.4028/www.scientific.net/MSF.679-680.107
Citation
T. W. Lee, I. G. Yeo, B. C. Shin, W. J. Lee, M. S. Park, H. H. Hwang, S. Nishino, "Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]", Materials Science Forum, Vols. 679-680, pp. 107-110, 2011
Online since
March 2011
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$32.00
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