Paper Title:
Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
  Abstract

Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ~ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using µ-PL and µ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
119-122
DOI
10.4028/www.scientific.net/MSF.679-680.119
Citation
R. L. Myers-Ward, L. O. Nyakiti, J. K. Hite, O. J. Glembocki, F. J. Bezares, J. D. Caldwell, E. A. Imhoff, K. D. Hobart, J. C. Culbertson, Y. N. Picard, V. D. Wheeler, C. R. Eddy, D. K. Gaskill, "Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas", Materials Science Forum, Vols. 679-680, pp. 119-122, 2011
Online since
March 2011
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