Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas |
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| Journal | Materials Science Forum (Volumes 679 - 680) |
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| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 119-122 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.119 |
| Citation | Rachael L. Myers-Ward et al., 2011, Materials Science Forum, 679-680, 119 |
| Online since | March, 2011 |
| Authors | Rachael L. Myers-Ward, Luke O. Nyakiti, Jennifer K. Hite, Orest J. Glembocki, Francisco J. Bezares, Joshua D. Caldwell, Eugene A. Imhoff, Karl D. Hobart, James C. Culbertson, Yoosuf N. Picard, Virginia D. Wheeler, Charles R. Eddy, D. Kurt Gaskill |
| Keywords | µ-Photoluminescence, µ-Raman Spectroscopy, 3C-SiC, 4H-SiC, On-Axis Growth, Step Free Mesas |
| Abstract | Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ~ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using µ-PL and µ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free. |
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