Paper Title:
On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals
  Abstract

It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
12-15
DOI
10.4028/www.scientific.net/MSF.679-680.12
Citation
A. A. Lebedev, P. L. Abramov, A.S. Zubrilov, E. V. Bogdanova, S. P. Lebedev, N. V. Seredova, A. S. Tregubova, "On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals", Materials Science Forum, Vols. 679-680, pp. 12-15, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Pierre Ferret, A. Leray, G. Feuillet, P. Lyan, C. Pudda, Thierry Billon
201
Authors: Rositza Yakimova, Mikael Syväjärvi, R.R Ciechonski, Qamar-ul Wahab
201
Authors: Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad ul Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow
Abstract:Crystal growth of 6H-SiC in two non-basal directions is reported. The two explored surfaces are the {1-103} plane, named qC-face, and the...
73
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna
Abstract:A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers,...
95