On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals |
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| Journal | Materials Science Forum (Volumes 679 - 680) |
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| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 12-15 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.12 |
| Citation | Alexander A. Lebedev et al., 2011, Materials Science Forum, 679-680, 12 |
| Online since | March, 2011 |
| Authors | Alexander A. Lebedev, Pavel L. Abramov, A.S. Zubrilov, Elena V. Bogdanova, Sergey P. Lebedev, N.V. Seredova, Alla S. Tregubova |
| Keywords | 3C-SiC, Sublimation Epitaxy, Volume Growth |
| Abstract | It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method. |
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