Paper Title:
4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
  Abstract

Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device applications in areas such as inverters for photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a newly observed triangular defect.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
123-126
DOI
10.4028/www.scientific.net/MSF.679-680.123
Citation
G. Y. Chung, M. J. Loboda, J. Zhang, J. W. Wan, E.P. Carlson, T.J. Toth, R. E. Stahlbush, M. Skowronski, R. Berechman, S. G. Sundaresan, R. Singh, "4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer", Materials Science Forum, Vols. 679-680, pp. 123-126, 2011
Online since
March 2011
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