4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer |
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| Journal | Materials Science Forum (Volumes 679 - 680) |
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| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 123-126 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.123 |
| Citation | Gil Yong Chung et al., 2011, Materials Science Forum, 679-680, 123 |
| Online since | March, 2011 |
| Authors | Gil Yong Chung, Mark J. Loboda, Jie Zhang, Jian Wei Wan, E.P. Carlson, T.J. Toth, Robert E. Stahlbush, Marek Skowronski, R. Berechman, Siddarth G. Sundaresan, Ranbir Singh |
| Keywords | 4H-SiC, Epitaxy, Low BPD, Obtuse Triangular Defects, Smooth Surface |
| Abstract | Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device applications in areas such as inverters for photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a newly observed triangular defect. |
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