Paper Title:
Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy
  Abstract

A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these “type II voids” as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
127-130
DOI
10.4028/www.scientific.net/MSF.679-680.127
Citation
P. Hens, J. Müller, L. Fahlbusch, E. Spiecker, P. J. Wellmann, "Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy", Materials Science Forum, Vols. 679-680, pp. 127-130, 2011
Online since
March 2011
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