Paper Title:
Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates
  Abstract

To assess deformation issues in SiC/Si, different pre-growth procedures were investigated, involving the addition of SiH4 to C3H8 during the temperature ramps used for the carbonization. 3C-SiC layers were deposited on (001) and (111) Si substrates by VPE. The mechanical deformation of the wafer was measured by makyoh, obtaining 2D maps of the entire wafers. For the same pre-growth procedures, the substrate curvature depends strongly on the orientation of the substrate, (001) or (111), being generally lower for (111) substrates. The deformation results were compared with XRD and Raman spectroscopy. Plastic deformation of the substrate was evidenced by XRD, while the presence of tensile stress is suggested by Raman analysis.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
137-140
DOI
10.4028/www.scientific.net/MSF.679-680.137
Citation
B. E. Watts, G. Attolini, T. Besagni, M. Bosi, C. Ferrari, F. Rossi, F. Riesz, L. D. Jiang, "Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates", Materials Science Forum, Vols. 679-680, pp. 137-140, 2011
Online since
March 2011
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$32.00
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