Paper Title:
Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
  Abstract

Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans along different structures reveal similar trends of the TO mode Raman Shift. We have found that, independently of the microstructure considered, the Raman frequency decreases close to the undercut. We compare our experimental measurements with FEM simulations finding that, close to the undercut, the stress tensor becomes non-diagonal, modifying the Raman shift to stress relation.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
141-144
DOI
10.4028/www.scientific.net/MSF.679-680.141
Citation
N. Piluso, M. Camarda, R. Anzalone, A. Severino, A. La Magna, G. D'Arrigo, F. La Via, "Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures", Materials Science Forum, Vols. 679-680, pp. 141-144, 2011
Online since
March 2011
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$32.00
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