Paper Title:
Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
  Abstract

The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick free-standing 3C-SiC layers. Temperature dependencies of Hall mobility, magneto-resistivity, and conductivity indicated presence of high potential barriers, up to 0.4 eV. The carrier mobilities and equilibrium densities were calculated in the barrier and inter-barrier regions. Contactless measurements of the excess carrier ambipolar mobility and lifetime at 1016-18 cm-3 injection levels revealed carrier scattering solely by phonons in 80 – 800 K range. A correlation between the temperature dependencies of carrier lifetime and ambipolar mobility pointed out that diffusion-limited surface recombination at extended defects contributes significantly to the carrier lifetime.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
157-160
DOI
10.4028/www.scientific.net/MSF.679-680.157
Citation
P. Ščajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, K. Jarašiūnas, "Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques", Materials Science Forum, Vols. 679-680, pp. 157-160, 2011
Online since
March 2011
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