Paper Title:
Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
  Abstract

We investigated non-equilibrium carrier dynamics in ~20μm thick 3C-SiC layers, grown by sublimation epitaxy directly on 6H-SiC substrate or buffered by a 3C seed layer. Differential transmission and light-induced transient grating techniques were applied to determine the ambipolar diffusion coefficient, carrier lifetime, and thermal activation energy of defects. The temperature dependences of ambipolar mobility and lifetime in 80-700 K range revealed the carrier scattering processes as well the impact of defects on the recombination rate, thus indicating slightly improved photoelectrical parameters of the homoepitaxially grown 3C layer. The determined thermal activation energies of 35 and 57 meV were attributed to the nitrogen impurity.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
161-164
DOI
10.4028/www.scientific.net/MSF.679-680.161
Citation
G. Manolis, M. Beshkova, M. Syväjärvi, R. Yakimova, K. Jarašiūnas, "Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers", Materials Science Forum, Vols. 679-680, pp. 161-164, 2011
Online since
March 2011
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$32.00
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