Paper Title:
Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
  Abstract

We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filter the defects and improve the as-grown material.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
169-172
DOI
10.4028/www.scientific.net/MSF.679-680.169
Citation
G. Zoulis, J. W. Sun, I. G. Galben-Sandulache, G. L. Sun, S. Juillaguet, T. Ouisse, D. Chaussende, R. Madar, J. Camassel, "Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique", Materials Science Forum, Vols. 679-680, pp. 169-172, 2011
Online since
March 2011
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