Paper Title:
Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
  Abstract

Non-uniformities of electrical properties of 4H-SiC CVD films have been revealed using physico-chemical reactions occurring upon introduction of radiation-induced structural defects. Primary knocked-out atoms and vacancies actively interact with defects of the starting material and thereby form the final system of radiation centers. The samples were irradiated with 900 keV electrons and 8 MeV protons at doses not leading to conductivity compensation ( 7.5  1012 cm–2) and a dose of 6  1014 cm–2 causing deep compensation. Capacitance methods demonstrated that characteristics of samples ~3 mm in size are not identical. The nuclear spectrometry technique, which enables microprobing of samples, demonstrated individual behavior of separate parts of a film with areas of tens of square micrometers (the dimension of α-particles track cross-section).

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
177-180
DOI
10.4028/www.scientific.net/MSF.679-680.177
Citation
A. M. Ivanov, N. B. Strokan, N.A. Scherbov, A. A. Lebedev, "Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation", Materials Science Forum, Vols. 679-680, pp. 177-180, 2011
Online since
March 2011
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