Non-uniformities of electrical properties of 4H-SiC CVD films have been revealed using physico-chemical reactions occurring upon introduction of radiation-induced structural defects. Primary knocked-out atoms and vacancies actively interact with defects of the starting material and thereby form the final system of radiation centers. The samples were irradiated with 900 keV electrons and 8 MeV protons at doses not leading to conductivity compensation ( 7.5 1012 cm–2) and a dose of 6 1014 cm–2 causing deep compensation. Capacitance methods demonstrated that characteristics of samples ~3 mm in size are not identical. The nuclear spectrometry technique, which enables microprobing of samples, demonstrated individual behavior of separate parts of a film with areas of tens of square micrometers (the dimension of α-particles track cross-section).