Paper Title:
Strain Measurements on Nitrogen Implanted 4H-SiC
  Abstract

The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and compared to previous studies on helium implanted SiC. The shape of the normal strain profile in the near surface region shows that the accumulation of point defects is not the only mechanism operative at room temperature. In the highly damaged region, the normal strain profile fits the N concentration.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
185-188
DOI
10.4028/www.scientific.net/MSF.679-680.185
Citation
M. Amigou, M. F. Beaufort, A. Declémy, S. Leclerc, J. F. Barbot, "Strain Measurements on Nitrogen Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 185-188, 2011
Online since
March 2011
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