Paper Title:
Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C­TLM Measurements
  Abstract

Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method (c­TLM) which allows extracting the specific contact resistance and Scanning Spreading Resistance Microscopy (SSRM) used to measure activated doping concentration. 3C-SiC samples were implanted at room temperature with different energies (ranging from 30 to 150keV) and doses (from 1 to 5.4x1015cm-2) in order to obtain a 300nm thick box-like profile at 5x1020cm-3. To activate the dopant, the samples were then annealed from 1150°C to 1350°C for 1h to 4h. Titanium-nickel c-TLM contacts annealed at 1000°C under argon showed the best results in terms of specific contact resistance (8x10-6.cm2) after a 1350°C–1h annealing. For this annealing condition, the activation rate was assessed by SSRM around 13%. This value confirms the difficulty to activate the dopants introduced into the 3C-SiC as the temperature is limited by the silicon substrate. However, this work demonstrates that low resistance values can be achieved on 3C-SiC, using nitrogen implantation at room temperature.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
193-196
DOI
10.4028/www.scientific.net/MSF.679-680.193
Citation
X. Song, A. E. Bazin, J. F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier, "Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C­TLM Measurements", Materials Science Forum, Vols. 679-680, pp. 193-196, 2011
Online since
March 2011
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