Paper Title:
Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
  Abstract

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
197-200
DOI
10.4028/www.scientific.net/MSF.679-680.197
Citation
T. Miyazawa, M. Ito, H. Tsuchida, "Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers", Materials Science Forum, Vols. 679-680, pp. 197-200, 2011
Online since
March 2011
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Price
$32.00
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