Paper Title:
Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
  Abstract

This work presents the crystalline quality investigation of 3C-SiC unseeded crystals grown from vapor phase. Samples were polished after different crystallographic planes from crystals grown with or without nitrogen flow. The structural and optical investigation showed that the central part of the samples exhibited a very good crystalline quality. The best samples proved to be the {100} growth sectors where the only defects found were stacking faults with a defect density under 103 cm-1. At the edges, i.e. between two adjacent growth sectors, structural investigation by transmission electron microscopy revealed stacking faults and hexagonal polytype inclusions. The nitrogen doping was found not to have an influence on the crystalline quality.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
20-23
DOI
10.4028/www.scientific.net/MSF.679-680.20
Citation
I. G. Galben-Sandulache, M. Marinova, A. Mantzari, G. L. Sun, A. Andreadou, D. Chaussende, E. K. Polychroniadis, "Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique", Materials Science Forum, Vols. 679-680, pp. 20-23, 2011
Online since
March 2011
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Price
$32.00
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