Paper Title:
Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
  Abstract

The effects of compensation on the hole concentration and mobility in Al-doped 4H-SiC have been investigated by theoretical calculations using the parameters taken from our experimental results on the less-compensated epilayers. The hole concentrations, hole Hall mobilities and resistivities obtained by experiment and calculations are compared and discussed.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
201-204
DOI
10.4028/www.scientific.net/MSF.679-680.201
Citation
A. Koizumi, N. Iwamoto, S. Onoda, T. Ohshima, T. Kimoto, K. Uchida, S. Nozaki, "Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 201-204, 2011
Online since
March 2011
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