Paper Title:
Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
  Abstract

Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier absorption, and light induced transient grating techniques. Considerably high carrier lifetime was observed in 3C-SiC epitaxial layers grown on 4H-SiC substrates using hot-wall CVD with respect to previously reported values for 3C-SiC grown either on Si or on 6H-SiC substrates. The temperature dependences of carrier lifetime and diffusion coefficient for 4H- and 3C-SiC were compared. Shorter photoluminescence decay time with respect to free carrier absorption decay time was observed in the same 4H-SiC sample, while these techniques revealed similar trends in the carrier lifetime temperature dependencies. However, the latter dependences for hot-wall CVD-grown 3C layers were found different if measured by time resolved photoluminescence and free carrier absorption techniques.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
205-208
DOI
10.4028/www.scientific.net/MSF.679-680.205
Citation
J. ul Hassan, P. Ščajev, K. Jarašiūnas, P. Bergman, "Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC", Materials Science Forum, Vols. 679-680, pp. 205-208, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Neimontas, Arunas Kadys, R. Aleksiejūnas, Kęstutis Jarašiūnas, Gil Yong Chung, Edward K. Sanchez, Mark J. Loboda
Abstract:We applied a non-degenerate four wave mixing (FWM) technique to investigate carrier generation, diffusion and recombination processes in...
469
Authors: Arunas Kadys, Patrik Ščajev, Georgios Manolis, Vytautas Gudelis, Kęstutis Jarašiūnas, Pavel L. Abramov, Sergey P. Lebedev, Alexander A. Lebedev
Abstract:Photoelectric properties of 3C sublimation-grown epitaxial layers with different structural quality were studied by using time-resolved...
219
Authors: Georgios Manolis, Georgios Zoulis, Sandrine Juillaguet, Jean Lorenzzi, Gabriel Ferro, Jean Camassel, Kęstutis Jarašiūnas
Abstract:Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL)...
443
Authors: Patrik Ščajev, Pavels Onufrijevs, Georgios Manolis, Mindaugas Karaliūnas, Saulius Nargelas, Nikoletta Jegenyes, Jean Lorenzzi, Gabriel Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syväjärvi, Rositza Yakimova, Masashi Kato, Kęstutis Jarašiūnas
Chapter 4: Characterization: Devices and Material
Abstract:We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by...
159
Authors: Peder Bergman, I.D. Booker, Louise Lilja, Jawad Ul Hassan, Erik Janzén
Chapter 3: Physical Properties and Characterization of SiC
Abstract:In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a...
289