Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 205-208 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.205 |
| Citation | Jawad ul Hassan et al., 2011, Materials Science Forum, 679-680, 205 |
| Online since | March, 2011 |
| Authors | Jawad ul Hassan, Patrik Ščajev, Kestutis Jarašiūnas, Peder Bergman |
| Keywords | Carrier Lifetime, Diffusion Coefficient, Free Carrier Absorption Decay, Light Induced Diffraction Grating |
| Price | US$ 28,- |
Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier absorption, and light induced transient grating techniques. Considerably high carrier lifetime was observed in 3C-SiC epitaxial layers grown on 4H-SiC substrates using hot-wall CVD with respect to previously reported values for 3C-SiC grown either on Si or on 6H-SiC substrates. The temperature dependences of carrier lifetime and diffusion coefficient for 4H- and 3C-SiC were compared. Shorter photoluminescence decay time with respect to free carrier absorption decay time was observed in the same 4H-SiC sample, while these techniques revealed similar trends in the carrier lifetime temperature dependencies. However, the latter dependences for hot-wall CVD-grown 3C layers were found different if measured by time resolved photoluminescence and free carrier absorption techniques.
