Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 217-220 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.217 |
| Citation | Mariana A. Fraga, 2011, Materials Science Forum, 679-680, 217 |
| Online since | March, 2011 |
| Authors | Mariana A. Fraga |
| Keywords | Gauge Factor, PECVD, Piezoresistive Property, RF Magnetron Sputtering, Silicon Carbide (SiC) |
| Price | US$ 28,- |
This work compares the piezoresistive properties of SiC thin films produced by two techniques enhanced by plasma, PECVD (plasma enhanced chemical vapor deposition) and RF magnetron sputtering. In order to study these properties, strain gauges based on SiC films produced were fabricated using photolithography techniques in conjunction with lift-off processes. The beam-bending method was used to characterize the SiC strain gauges fabricated.