Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 221-224 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.221 |
| Citation | Nicolò Piluso et al., 2011, Materials Science Forum, 679-680, 221 |
| Online since | March, 2011 |
| Authors | Nicolò Piluso, Andrea Severino, Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via |
| Keywords | 3C-SiC, Bulk Mobility, Raman Microscopy |
| Price | US$ 28,- |
Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.