Paper Title:

Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy

Periodical Materials Science Forum (Volumes 679 - 680)
Main Theme Silicon Carbide and Related Materials 2010
Edited by Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages 221-224
DOI 10.4028/www.scientific.net/MSF.679-680.221
Citation Nicolò Piluso et al., 2011, Materials Science Forum, 679-680, 221
Online since March, 2011
Authors Nicolò Piluso, Andrea Severino, Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via
Keywords 3C-SiC, Bulk Mobility, Raman Microscopy
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Abstract

Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.