Paper Title:
Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
  Abstract

Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
221-224
DOI
10.4028/www.scientific.net/MSF.679-680.221
Citation
N. Piluso, A. Severino, M. Camarda, A. Canino, A. La Magna, F. La Via, "Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy", Materials Science Forum, Vols. 679-680, pp. 221-224, 2011
Online since
March 2011
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Price
$32.00
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