Paper Title:
Defects in SiC: Theory
  Abstract

A brief overview about the recent progress in developing the methods to calculate the properties of defects in solids is given and some recent examples on vacancy-related defects in SiC are presented.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
225-232
DOI
10.4028/www.scientific.net/MSF.679-680.225
Citation
A. Gali, "Defects in SiC: Theory", Materials Science Forum, Vols. 679-680, pp. 225-232, 2011
Online since
March 2011
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Yoshino, Y. Shinzato, Masahiko Morinaga
Abstract:Formation energies of various defects in Al2O3 and SiO2 are calculated by using the plane-wave...
713
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
Abstract:From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200...
379
Authors: Hui Ling Zhang, Qun Bo Fan, Fu Chi Wang, Feng Zhang
Abstract:To enhance the high-temperature stability of zirconate pyrochlore structures, one has to focus on their transformation to the disordered...
1689
Authors: A. Andrianakis, Charalamos A. Londos, Andrzej Misiuk, Valentin V. Emtsev, Gagik A. Oganesyan, H. Ohyama
Abstract:We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subjected to thermal treatments at 1000oC and 1130oC...
123
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427