Paper Title:
Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 233-236 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.233 |
| Citation | Lars S. Løvlie et al., 2011, Materials Science Forum, 679-680, 233 |
| Online since | March, 2011 |
| Authors | Lars S. Løvlie, Bengt G. Svensson |
| Keywords | DLTS, EH6/7, Ion Implantation, Z1/2 |
| Price | US$ 28,- |
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Abstract
Annealing of the Z1/2 and EH6/7 has been studied by DLTS after ion implantation of MeV Si ions and subsequent annealing in either N2 or O2 at 1150 °C, in the dose range 1 - 4 × 108 Si / cm2. It is found that the annealing rate of these prominent defects is greatly enhanced after thermal oxidation, and in particular close to the surface area, due to injection of a defect species which annihilates with both Z1/2 and EH6/7. The migration part of the diffusion coefficient of the injected defect is established to be in the range 1 – 2 × 10-8 cm2/s, and the measured concentration versus depth profiles of both Z1/2 and EH6/7 are accurately simulated by a simple model.
