Paper Title:
Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
  Abstract

Annealing of the Z1/2 and EH6/7 has been studied by DLTS after ion implantation of MeV Si ions and subsequent annealing in either N2 or O2 at 1150 °C, in the dose range 1 - 4 × 108 Si / cm2. It is found that the annealing rate of these prominent defects is greatly enhanced after thermal oxidation, and in particular close to the surface area, due to injection of a defect species which annihilates with both Z1/2 and EH6/7. The migration part of the diffusion coefficient of the injected defect is established to be in the range 1 – 2 × 10-8 cm2/s, and the measured concentration versus depth profiles of both Z1/2 and EH6/7 are accurately simulated by a simple model.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
233-236
DOI
10.4028/www.scientific.net/MSF.679-680.233
Citation
L. S. Løvlie, B. G. Svensson, "Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation", Materials Science Forum, Vols. 679-680, pp. 233-236, 2011
Online since
March 2011
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