Paper Title:
Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
  Abstract

Low doped epitaxial films of 4H SiC irradiated at 1 MeV and electron fluences of 1×1015 cm-2, 3×1015 cm-2 and 1×1016 cm-2 have been used to measure temperatures in two temperature intervals: 580°C to 640°C and 1220°C to 1320°C. Possible accuracy of the temperature measurements is judged to be better than 10 degrees Centigrade. Similar measurements should be possible from 100°C to 1500°C.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
237-240
DOI
10.4028/www.scientific.net/MSF.679-680.237
Citation
F. Yan, A. Espenlaub, R. P. Devaty, T. Ohshima, W. J. Choyke, "Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C", Materials Science Forum, Vols. 679-680, pp. 237-240, 2011
Online since
March 2011
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$32.00
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