We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.