Paper Title:
Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
  Abstract

We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
24-27
DOI
10.4028/www.scientific.net/MSF.679-680.24
Citation
Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara, Y. Takeda, "Polytype Stability of 4H-SiC Seed Crystal on Solution Growth", Materials Science Forum, Vols. 679-680, pp. 24-27, 2011
Online since
March 2011
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Price
$32.00
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