Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 245-248 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.245 |
| Citation | Ivan G. Ivanov et al., 2011, Materials Science Forum, 679-680, 245 |
| Online since | March, 2011 |
| Authors | Ivan G. Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke, Erik Janzén |
| Keywords | Donor-Acceptor Pair Luminescence, Ionization Energy, Phosphorus Donor |
| Price | US$ 28,- |
The analysis of the donor-acceptor pair luminescence of P-Al and N-Al pairs obtained recently for the cubic 3C polytype of SiC is viewed in some detail. A detailed consideration is given to the fitting procedure applied to the P-Al and N-Al spectra. Fit with theoretical models of spectra of type I and type II are applied to both N-Al and P-Al experimental spectra, and it is demonstrated that only contribution from P on Si site is observable in the presented samples. The accuracy of the obtained phosphorus ionization energy of 48.1 meV is also discussed.