Paper Title:
Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
  Abstract

DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A ! B and B ! A) take place above 700 ±C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to EA = 2.4±0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
249-252
DOI
10.4028/www.scientific.net/MSF.679-680.249
Citation
F. C. Beyer, C. G. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzén, "Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 249-252, 2011
Online since
March 2011
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$32.00
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