Paper Title:
Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
  Abstract

An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC epitaxial layers. Electrical characterization of the epilayers, performed by Fourier-Transform Deep Level Transient Spectroscopy, revealed the presence of six levels in the band gap, in the 0.1-1.6 eV energy range. Their nature is discussed in the light of previous experimental and theoretical works found in the literature.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
253-256
DOI
10.4028/www.scientific.net/MSF.679-680.253
Citation
G. Alfieri, T. Kimoto, "Electrically Active Defects in Electron Irradiated P-Type 6H-SiC", Materials Science Forum, Vols. 679-680, pp. 253-256, 2011
Online since
March 2011
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Price
$32.00
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