Paper Title:
Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy
  Abstract

Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe-related defects were observed in n-type 4H-SiC, while two Fe-related centers could be identified in p-type 4H-SiC. The electrical behavior of these centers is donor-like.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
257-260
DOI
10.4028/www.scientific.net/MSF.679-680.257
Citation
L. Trapaidze, R. Hollweck, S. Beljakowa, B. Zippelius, H. B. Weber, G. Pensl, M. Krieger, "Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 679-680, pp. 257-260, 2011
Online since
March 2011
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Price
$32.00
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