Paper Title:
Iron-Related Defect Centers in 3C-SiC
  Abstract

p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon (Ar) profiles with similar implantation damage were implanted in order to distinguish between iron-related defects and defects caused by implantation damage. Two donor-like iron-related centers were identified in p-type 3C-SiC.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
265-268
DOI
10.4028/www.scientific.net/MSF.679-680.265
Citation
T. Tsirimpis, S. Beljakova, B. Zippelius, H. B. Weber, G. Pensl, M. Krieger, H. Nagasawa, T. Kawahara, N. Hatta , K. Yagi, H. Uchida, M. Kobayashi, A. Schöner, "Iron-Related Defect Centers in 3C-SiC", Materials Science Forum, Vols. 679-680, pp. 265-268, 2011
Online since
March 2011
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Price
$32.00
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